100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Re

100 V, 10 A PNP high power bipolar transistor

100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

封装/外壳：SC-100，SOT-669 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 10A LFPAK56 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

100 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

100 V, 10 A NPN high power bipolar transistor

PHOTODARLINGTON ?쏱IGTAIL?

DESCRIPTION The 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a package designed to be mounted in a single-clad printed circuit board. Its large effective aperture and narrow angular response make this a highly sensitive device with minimum response to off-axis or stray light. Th

GaAs PIN DIODES

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