型号 功能描述 生产厂家&企业 LOGO 操作
PHP52N06T

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP52N06TinSOT78(TO-220AB). Features ■Lowon-stateresistance ■175°Crated. Applications ■DCtoDCconverters ■Uninterruptiblepowersup

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP52N06T

N-channelTrenchMOSstandardlevelFET

ETC

知名厂家

PHP52N06T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PHP52N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TMOSPOWERFET52AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

TMOSPOWERFET52AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

TMOSPOWERFET52AMPERES60VOLTSRDS(on)=0.022OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

N?묬hannelPowerMOSFET

文件:265.84 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N?묬hannelPowerMOSFET

文件:266.52 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PHP52N06T产品属性

  • 类型

    描述

  • 型号

    PHP52N06T

  • 功能描述

    MOSFET RAIL MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-4 14:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
40
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
PHI
2022+
TO-220
12888
原厂代理 终端免费提供样品
PHI
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
PHI
17+
TO-220
6200
PHI
2022+
TO220
20000
只做原装进口现货.假一罚十
VBSEMI/台湾微碧
24+
TO-220
60000
全新原装现货
PH
24+
SOT78TO-220AB
8866
恩XP
23+
40
全新原装正品现货,支持订货
恩XP
25+
SOT78
188600
全新原厂原装正品现货 欢迎咨询

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