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PHP18NQ10T价格
参考价格：￥2.8604
型号：PHP18NQ10T,127 品牌：NXP 备注：这里有PHP18NQ10T多少钱，2025年最近7天走势，今日出价，今日竞价，PHP18NQ10T批发/采购报价，PHP18NQ10T行情走势销售排行榜，PHP18NQ10T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHP18NQ10T | N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s | Philips 飞利浦 |   | |
PHP18NQ10T | N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H | NEXPERIA 安世 | | |
PHP18NQ10T | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PHP18NQ10T | N-channel TrenchMOS standard level FET | NEXPERIA 安世 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits | NEXPERIA 安世 | | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s | Philips 飞利浦 | | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |
PHP18NQ10T产品属性
- 类型
描述
- 型号
PHP18NQ10T
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
2023+ |
TO220 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
Nexperia(安世) |
24+ |
SOT-78 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
PH |
24+ |
SOT78TO-220AB |
8866 |
||||
恩XP |
24+ |
TO220 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEXPERIA/安世 |
2447 |
SOT78 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
恩XP |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
PHI |
1923+ |
TO-252 |
7823 |
绝对进口原装现货库存特价销售 |
|||
恩XP |
21+ |
TO220 |
1709 |
||||
NEXPERIA/安世 |
25+ |
SOT78 |
600000 |
NEXPERIA/安世全新特价PHP18NQ10T即刻询购立享优惠#长期有排单订 |
PHP18NQ10T规格书下载地址
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DdatasheetPDF页码索引
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