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PHP18NQ10T价格

参考价格:¥2.8604

型号:PHP18NQ10T,127 品牌:NXP 备注:这里有PHP18NQ10T多少钱,2026年最近7天走势,今日出价,今日竞价,PHP18NQ10T批发/采购报价,PHP18NQ10T行情走势销售排行榜,PHP18NQ10T报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PHP18NQ10T

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

PHILIPS

飞利浦

PHP18NQ10T

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PHP18NQ10T

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

NEXPERIA

安世

PHP18NQ10T

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Low conduction losses due to low on-state resistance\n• Suitable for high frequency applications due to fast switching characteristics;

NEXPERIA

安世

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

PHILIPS

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits 

NEXPERIA

安世

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

PHILIPS

飞利浦

PHP18NQ10T产品属性

  • 类型

    描述

  • Package name:

    TO-220AB

  • Product status:

    Production

  • Channel type:

    N

  • Number of transistors:

    1

  • V_DS [max] (V):

    100

  • R_DSon [max] @ V_GS = 10 V (mΩ):

    90

  • T_j [max] (°C):

    175

  • I_D [max] (A):

    18

  • Q_GD [typ] (nC):

    8

  • Q_G(tot) [typ] @ V_GS = 10 V (nC):

    21

  • P_tot [max] (W):

    79

  • Q_r [typ] (nC):

    135

  • V_GSth [typ] (V):

    3

  • Automotive qualified:

    N

  • C_iss [typ] (pF):

    633

  • C_oss [typ] (pF):

    103

  • Date:

    2011-01-03

更新时间:2026-8-1 20:00:00
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