N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

PHK13N03LT - N-channel TrenchMOS logic level FET

TrenchMOS logic level FET

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N-channel TrenchMOS logic level FET

丝印代码：13N03LA；OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

丝印代码：13N03LA；OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature