N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK) Features ■ Low on-state resistance ■ Fast switching