MOS FIELD EFFECT TRANSISTOR

Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, I

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low input capacitance Ciss = 3400 pF T

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages