位置：首页 > IC中文资料 > PHD20N06TMOS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 |   | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 平伟实业 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
|||
GT/YGMOS |
24+ |
NA/ |
93250 |
原装现货,当天可交货,原型号开票 |
|||
ON |
21+ |
TO252 |
10000 |
只做原装,质量保证 |
|||
ON |
24+ |
TO-251 |
2 |
||||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UMW/广东友台半导体 |
2450+ |
TO-252-2 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
AOS |
16+ |
TO-252 |
980 |
进口原装现货/价格优势! |
|||
ON |
24+ |
TO252 |
12800 |
原装正品现货支持实单 |
|||
UMW(友台半导体) |
25+ |
DIP |
2200 |
国产替换现货降本 |
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