N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters ■ General purpose switch.

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 77mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PHD20N06T - N-channel TrenchMOS standard level FET

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-Channel 60-V (D-S) MOSFET

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Fast Switching

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20A mps,60 Volts N-CHANNEL MOSFET

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