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PHD价格
参考价格：￥433.0973
型号：PHD.3B.308.CLLD82 品牌：LEMO 备注：这里有PHD多少钱，2025年最近7天走势，今日出价，今日竞价，PHD批发/采购报价，PHD行情走势销售排行榜，PHD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHD | Fiber Optics 文件：96.16 Kbytes Page：1 Pages | ITT ITT Industries |  |   |
TrenchMOS??logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOS transistor | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOS transistor | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel TrenchMOS transistor | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPN power transistor with integrated diode Generaldescription Highvoltage,highspeed,planarpassivatedNPNpowerswitchingtransistorwithintegratedanti-parallelemitter-collectordiodeinaSOT54(TO-92)plasticpackage. Featuresandbenefits •HightypicalDCcurrentgain •Fastswitching •Highvoltagecapability •Integrate | WEENWeEn Semiconductors 瑞能半导体瑞能半导体科技股份有限公司 |  | | |
NPN power transistor with integrated diode | ETC 知名厂家 | ETC | | |
NPN power transistor with integrated diode Generaldescription Highvoltage,highspeed,planarpassivatedNPNpowerswitchingtransistorwithintegratedanti-parallelE-CdiodeinaSOT78(TO-220AB)plasticpackage. Featuresandbenefits •Lowthermalresistance •Fastswitching •Highvoltagecapability •Integratedanti-parallelE | WEENWeEn Semiconductors 瑞能半导体瑞能半导体科技股份有限公司 | | | |
TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=67mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS transistor | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel TrenchMOS transistor | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
N-Channel 60-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel 60-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-channel TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOSÔ transistor Logic level FET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=120mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel TrenchMOS transistor | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS transistor | ETC 知名厂家 | ETC | | |
PowerMOS transistors Avalanche energy rated | ETC 知名厂家 | ETC | | |
PowerMOS transistors Avalanche energy rated | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS transistor | ETC 知名厂家 | ETC | | |
PowerMOS transistor | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS •DC/DCConverters •DC/ACInverters •MotorDrives | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
PowerMOS transistor Logic level FET | ETC 知名厂家 | ETC | | |
PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output Description ThePHD32seriesconvertersarenon-isolateddualoutputDC/DCconvertersavailableinthroughholeandsurfacemountconfigurations.Theproductsprovidepointofloadconversionofasingle3.3Vor5Vinputvoltagetotwoindependentlyregulatedlowoutputvoltages.Eachoutputcan | POWER-ONE Power-One |  | | |
PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output Description ThePHD32seriesconvertersarenon-isolateddualoutputDC/DCconvertersavailableinthroughholeandsurfacemountconfigurations.Theproductsprovidepointofloadconversionofasingle3.3Vor5Vinputvoltagetotwoindependentlyregulatedlowoutputvoltages.Eachoutputcan | POWER-ONE Power-One | | | |
PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output Description ThePHD32seriesconvertersarenon-isolateddualoutputDC/DCconvertersavailableinthroughholeandsurfacemountconfigurations.Theproductsprovidepointofloadconversionofasingle3.3Vor5Vinputvoltagetotwoindependentlyregulatedlowoutputvoltages.Eachoutputcan | POWER-ONE Power-One | | | |
PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output Description ThePHD32seriesconvertersarenon-isolateddualoutputDC/DCconvertersavailableinthroughholeandsurfacemountconfigurations.Theproductsprovidepointofloadconversionofasingle3.3Vor5Vinputvoltagetotwoindependentlyregulatedlowoutputvoltages.Eachoutputcan | POWER-ONE Power-One | | | |
PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output Description ThePHD32seriesconvertersarenon-isolateddualoutputDC/DCconvertersavailableinthroughholeandsurfacemountconfigurations.Theproductsprovidepointofloadconversionofasingle3.3Vor5Vinputvoltagetotwoindependentlyregulatedlowoutputvoltages.Eachoutputcan | POWER-ONE Power-One | | | |
PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output Description ThePHD32seriesconvertersarenon-isolateddualoutputDC/DCconvertersavailableinthroughholeandsurfacemountconfigurations.Theproductsprovidepointofloadconversionofasingle3.3Vor5Vinputvoltagetotwoindependentlyregulatedlowoutputvoltages.Eachoutputcan | POWER-ONE Power-One | | |
PHD产品属性
- 类型
描述
- 型号
PHD
- 制造商
ITT
- 制造商全称
ITT Industries
- 功能描述
Fiber Optics
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
24+ |
标准封装 |
27048 |
全新原装正品/价格优惠/质量保障 |
|||
TI(德州仪器) |
24+ |
DEJ |
5239 |
百分百原装正品,可原型号开票 |
|||
NXP |
2016+ |
TO252 |
3950 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PHI |
24+ |
TO-252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
JST |
24+ |
162334 |
明嘉莱只做原装正品现货 |
||||
NXP |
24+ |
TO-252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
JST连接器 |
23+ |
NA |
22470 |
进口连接器件供应特价正迈科技可在咨询□□ |
|||
NXP |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
JST/日压 |
24+ |
N/A |
2000 |
只要挂着就有货原装正品价格优惠 |
|||
NXP |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
PHD芯片相关品牌
PHD规格书下载地址
PHD参数引脚图相关
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PHD数据表相关新闻
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