位置：首页 > IC中文资料 > PHB80N03LT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 |   | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l | ADV 爱德微 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.00146 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching Characteristic 文件：82.72 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：82.72 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
10+ |
TO263 |
7800 |
全新原装正品,现货销售 |
|||
AP |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
25+23+ |
DDPAK-14 |
8648 |
绝对原装正品全新进口深圳现货 |
||||
INFINEON/英飞凌 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
ADI |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
AP |
23+ |
TO263 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
2001 |
DDPAK-14 |
6000 |
绝对原装自己现货 |
||||
24+ |
5000 |
公司存货 |
|||||
AP |
24+ |
TO263 |
5000 |
全现原装公司现货 |
PHB80N03LT规格书下载地址
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DdatasheetPDF页码索引
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