TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

TrenchMOS transistor Standard level FET

60V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

65A, 60V N-CHANNEL MOSFET

文件：374.37 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：644.19 Kbytes Page：8 Pages

Drain Current ?밒D=63A@ TC=25C

文件：136.98 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：316.09 Kbytes Page：2 Pages