位置：首页 > IC中文资料第7318页 > PHB1N60T/R
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  |   | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | Littelfuselittelfuse 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
PHB1N60T/R产品属性
- 类型
描述
- 型号
PHB1N60T/R
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.9A I(D) | SOT-404
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MORNSUN |
2017+ |
TO-251 |
6528 |
只做原装正品!假一赔十! |
|||
2015+ |
500 |
公司现货库存 |
|||||
FSC原装正品 |
23+ |
TO92 |
12328 |
||||
UTC |
24+ |
SOT-223 |
67540 |
现货库存,实单请给接受价格 |
|||
国产 |
19+ |
LL34 |
20000 |
||||
UTC/友顺 |
24+ |
SOT-223 |
2600 |
只做原厂渠道 可追溯货源 |
|||
国产 |
2447 |
DO-13 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
德爱 |
2410+ |
TO-251 |
32100 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
JXW |
22+ |
TO-92-251 |
20000 |
深圳原装现货正品有单价格可谈 |
|||
FH |
24+/25+ |
TO-92 |
80 |
原装正品现货库存价优 |
PHB1N60T/R芯片相关品牌
PHB1N60T/R规格书下载地址
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DdatasheetPDF页码索引
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