型号 功能描述 生产厂家 企业 LOGO 操作
PHB12NQ15T

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. FEATURES • ’Trench’ technology •

Philips

飞利浦

PHB12NQ15T

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. FEATURES • ’Trench’ technology •

Philips

飞利浦

N-Channel 150 V (D-S) MOSFET

文件:1.00256 Mbytes Page:9 Pages

VBSEMI

微碧半导体

PHB12NQ15T产品属性

  • 类型

    描述

  • 型号

    PHB12NQ15T

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    N-channel TrenchMOS transistor

更新时间:2025-10-16 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
TO263-2
68500
一级代理 原装正品假一罚十价格优势长期供货
PHI
23+
TO-263
125786
原厂授权一级代理,专业海外优势订货,价格优势、品种
PHI
2402+
TO263
8324
原装正品!实单价优!
PHI
2025+
SOT-404
3550
全新原厂原装产品、公司现货销售
PHI
99+
780
原装现货海量库存欢迎咨询
PHI
24+
TO263-2
49
PHI
20+
TO-263
32500
现货很近!原厂很远!只做原装
恩XP
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
N
25+
SOT404(D
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
PHI
23+
TO-263
50000
全新原装正品现货,支持订货

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