PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

PowerMOS transistor

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

N-Channel 650 V (D-S) MOSFET

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POWER MOSFET

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10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.59586 Mbytes Page：12 Pages

10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.59586 Mbytes Page：12 Pages