| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTP10N40 | TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi | MOTOROLA 摩托罗拉 | ||
MTP10N40 | Power Field Effect Transistor
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MTP10N40 | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS | ETC 知名厂家 | ETC | ||
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi | MOTOROLA 摩托罗拉 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · High Voltage Power Supplies · PWM Motor Controls · Inductive Load Circuits | ISC 无锡固电 | |||
N-Channel 650 V (D-S) MOSFET 文件:1.033119 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
N?묬hannel Enhancement?묺ode Silicon Gate 文件:234.83 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
N−Channel Enhancement−Mode Silicon Gate | ONSEMI 安森美半导体 | |||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHP10N60E is supplied | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX10N40E is supplied | PHILIPS 飞利浦 | |||
TMOS POWER FET 10 AMPERES 文件:273.15 Kbytes Page:10 Pages | MOTOROLA 摩托罗拉 |
MTP10N40产品属性
- 类型
描述
- Minimum Operating Temperature:
-65°C
- Maximum Power Dissipation:
125000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
400V
- Maximum Continuous Drain Current:
10A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
11528 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
- |
11580 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MYSON |
2016+ |
SOP24 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
MYSON |
25+ |
SOP24 |
531 |
全新原装正品支持含税 |
|||
ON |
26+ |
TO-220 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
MYSON |
25+ |
SSOP48 |
29 |
普通 |
|||
MOT |
06+ |
TO-220 |
3000 |
原装库存 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
MTP10N40规格书下载地址
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原厂 原包装 绝无虚假 假一罚十
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类型 描述 选取全部项目 类别 电缆,电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高(107.9mm x 12.7mm x 3.0mm) 配套使用产品/相关产品 M,I,S 束带 材料 尼龙 颜色 天然
2019-10-30MTMC8E02LBF
MTMC8E02LBF,全新原装当天发货或门市自取0755-82732291,
2019-4-9
DdatasheetPDF页码索引
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