TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi

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Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi

N?묬hannel Enhancement?묺ode Silicon Gate

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TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N−Channel Enhancement−Mode Silicon Gate

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

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10A 400V N-channel Enhancement Mode Power MOSFET

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10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.59586 Mbytes Page：12 Pages