| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTP10N40 | TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi | MOTOROLA 摩托罗拉 |   | |
MTP10N40 | Power Field Effect Transistor
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MTP10N40 | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS | ETC 知名厂家 | ETC | | |
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi | MOTOROLA 摩托罗拉 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033119 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N?묬hannel Enhancement?묺ode Silicon Gate 文件：234.83 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N−Channel Enhancement−Mode Silicon Gate | ONSEMI 安森美半导体 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHP10N60E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX10N40E is supplied | PHILIPS 飞利浦 | | ||
TMOS POWER FET 10 AMPERES 文件：273.15 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
MTP10N40产品属性
- 类型
描述
- Minimum Operating Temperature：
-65°C
- Maximum Power Dissipation：
125000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
400V
- Maximum Continuous Drain Current：
10A
- Material：
Si
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
N/A |
1060 |
||||
MYSON |
25+ |
SOP24 |
531 |
全新原装正品支持含税 |
|||
ON/安森美 |
22+ |
TO-220 |
20041 |
||||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON |
26+ |
TO-220 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
23+ |
TO-TO-220 |
15400 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MYSON |
2447 |
SOP24-7.2 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MYSON |
2016+ |
SOP24 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
MTP10N40规格书下载地址
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类型 描述 选取全部项目 类别 电缆，电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高（107.9mm x 12.7mm x 3.0mm） 配套使用产品/相关产品 M，I，S 束带 材料 尼龙 颜色 天然
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MTMC8E02LBF，全新原装当天发货或门市自取0755-82732291，
2019-4-9
DdatasheetPDF页码索引
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