PHB价格

参考价格:¥231.7565

型号:PHB.1B.306.CLLD72Z 品牌:LEMO 备注:这里有PHB多少钱,2025年最近7天走势,今日出价,今日竞价,PHB批发/采购报价,PHB行情走势销售排行榜,PHB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PHB

Short Stroke Pushbutton Switches

Features/Benefits •Momentaryorlatchingaction •Lowcost,reliablecontactdesign •2&4poleconfigurations •Sealedcontacts •Optionalbuttons •RoHScompliant design TypicalApplications •Computersandperipherals •Instrumentationand measurementequipment •Non-power,on-o

CK-COMPONENTS

C&K Components

CK-COMPONENTS
PHB

High Current - High voltage ??Good Pulse Current rating

文件:273.77 Kbytes Page:6 Pages

ILLINOISCAPACITORIllinois Capacitor, Inc.

伊利诺斯伊利诺斯电容器股份有限公司

ILLINOISCAPACITOR
PHB

Momentary or latching action

文件:260.06 Kbytes Page:3 Pages

CK-COMPONENTS

C&K Components

CK-COMPONENTS
PHB

Cylindrical pack

文件:350.19 Kbytes Page:3 Pages

EATONEaton All Rights Reserved.

伊顿伊顿公司

EATON

Short Stroke Pushbutton Switches

Features/Benefits •Momentaryorlatchingaction •Lowcost,reliablecontactdesign •2&4poleconfigurations •Sealedcontacts •Optionalbuttons •RoHScompliant design TypicalApplications •Computersandperipherals •Instrumentationand measurementequipment •Non-power,on-o

CK-COMPONENTS

C&K Components

CK-COMPONENTS

N-channel enhancement mode field-effect transistor

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS??logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

ETC

知名厂家

N-channel TrenchMOS standard level FET

ETC

知名厂家

TrenchMOS logic level FET

ETC

知名厂家

N-channel TrenchMOS logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOS transistor

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channel TrenchMOS logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

N-channel enhancement mode field-effect transistor

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.1mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS transistor Logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Logic level FET

ETC

知名厂家

N-channel TrenchMOS transistor Logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOS transistors Avalanche energy rated

ETC

知名厂家

PowerMOS transistors Avalanche energy rated

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Logic level FET

ETC

知名厂家

TrenchMOS transistor Logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Standard level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS transistor

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Logic level FET

ETC

知名厂家

TrenchMOS transistor Logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Standard level FET

ETC

知名厂家

PowerMOS transistors Avalanche energy rated

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor

ETC

知名厂家

TrenchMOS standard level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel enhancement mode field-effect transistor

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PHB产品属性

  • 类型

    描述

  • 型号

    PHB

  • 功能描述

    环形推拉式连接器 FREE RECEPTACLE CABLE COLLET

  • RoHS

  • 制造商

    Hirose Connector

  • 产品类型

    Connectors

  • 系列

    HR10

  • 触点类型

    Socket(Female)

  • 外壳类型

    Receptacle

  • 触点数量

    4

  • 外壳大小

    7

  • 安装风格

    Panel

  • 端接类型

    Solder

  • 电流额定值

    2 A

更新时间:2025-5-18 16:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILIPS
19+
SOT404(D2PAK)
33000
PHILIPS
17+
TO-263
6200
PHI
24+
TO
40
PHILIPS
24+
TO263
8000
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NXP/恩智浦
24+
TO-263
504495
免费送样原盒原包现货一手渠道联系
NIEC
23+
模块
3562
PHILIPS
22+
TO
3000
原装正品,支持实单
Nexperia USA Inc.
24+
D2PAK
30000
晶体管-分立半导体产品-原装正品
PHILIPS
0035+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHI
23+
TO
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询

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