N-channel enhancement mode field-effect transistor

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N-channel enhancement mode field-effect transistor

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

N-channel TrenchMOS logic level FET

N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

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N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

N-channel TrenchMOS logic level FET

LOW-DROPOUT REGULATORS . HIGH EFFICIENCY

LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed specifically to meet the requirement for extended operation of battery-powered equipment such as cordless and cellular telephones, the A8220SLH thru A8233SLH voltage regulators offer the reduced dropout voltage and quiescent current essential fo

16 V Rail-to-Rail, Zero-Drift, Precision Instrumentation Amplifier

GENERAL DESCRIPTION The AD8230 is a low drift, differential sampling, precision instrumentation amplifier. Auto-zeroing reduces offset voltage drift to less than 50 nV/°C. The AD8230 is well-suited for thermocouple and bridge transducer applications. The AD8230’s high CMR of 110 dB (minimum) reje

Conformal Coated RF Choke

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MSD Single Tower Coil with Isolated Ground

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BIPOLAR ANALOG INTEGRATED CIRCUIT

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