N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

N-channel TrenchMOS logic level FET

N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

文件：84.84 Kbytes Page：12 Pages

LOW-DROPOUT REGULATORS . HIGH EFFICIENCY

LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed specifically to meet the requirement for extended operation of battery-powered equipment such as cordless and cellular telephones, the A8220SLH thru A8233SLH voltage regulators offer the reduced dropout voltage and quiescent current essential fo

16 V Rail-to-Rail, Zero-Drift, Precision Instrumentation Amplifier

GENERAL DESCRIPTION The AD8230 is a low drift, differential sampling, precision instrumentation amplifier. Auto-zeroing reduces offset voltage drift to less than 50 nV/°C. The AD8230 is well-suited for thermocouple and bridge transducer applications. The AD8230’s high CMR of 110 dB (minimum) reje

Conformal Coated RF Choke

文件：225.08 Kbytes Page：2 Pages

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：148.77 Kbytes Page：9 Pages

MSD Single Tower Coil with Isolated Ground

文件：225.41 Kbytes Page：2 Pages