N-channel 25 V 6.3 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology 1.2 Features and benefits  Low thermal resistance  Low threshold voltage  Optimized for use in DC-to-DC converters  Very low switching and conduction

N-channel TrenchMOS logic level FET

N-channel 25 V 6.3 mΩ logic level MOSFET in LFPAK

N-channel TrenchMOS logic level FET

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HELP3E Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module

PRODUCT DESCRIPTION AWC6325 addresses the demand for increased integration in dual-band handsets for CDMA networks. The small footprint 3 mm x 5 mm x 0.9 mm surface mount RoHS compliant package contains independent RF PA paths to ensure optimal performance in both frequency bands in less board

0.5W Zener Diode

Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades.

Card Edge Connectors

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Component 1 18 X 1 PAIR

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Motor speed and phase control

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