N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH5330 in SOT669 (LFPAK). Features ■ Logic level compatible ■ Low drive current ■ High-density mounting ■ Very low on-state resistance. Applications ■ DC-to-DC conve

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

N-channel enhancement mode field-effect transistor

N-channel TrenchMOS logic level FET

(22.2 mm) Multi Turn Wirewound Potentiometer - 533: 3 Turns / 534: 10 Turns / 535: 5 Turns

FEATURES • Bushing and servo mount designs available • Linearity ± 0.25 , down to 0.05 on request • Special resistance tolerances to 1 • Rear shaft extensions and support bearing • Metric shaft available • Dual gang configuration and concentric shafts • High torque, center tap, slipping c

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533 series

文件：255.7 Kbytes Page：4 Pages

7/8 (22.2 mm) Multiturn Wirewound 533: 3 Turns/534: 10 Turns/535: 5 Turns

文件：100.25 Kbytes Page：4 Pages

(22.2 mm) Multi Turn Wirewound Potentiometer - 533: 3 Turns/534: 10 Turns/535: 5 Turns

文件：85.23 Kbytes Page：4 Pages