N-channel TrenchMOS intermediate level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Low thermal resistance n SO8 equivalent area footprint n Low threshold voltage n Low on-state resistance

PH4840S - N-channel TrenchMOS intermediate level FET

N-channel TrenchMOS intermediate level FET

文件：84.46 Kbytes Page：12 Pages

N-channel TrenchMOS intermediate level FET

N-Channel Enhancement Mode Power MOSFET

Description The 4840 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lea

TUBEAXIAL

- AC fans with external rotor shadedpole motor. Impedance protected against overloading. - Metal fan housing and impeller. - Air intake over struts. Rotational direction CW looking at rotor. Types 4890N and 4840N air exhaust over struts. - Mounting from either face using four 4.3 mm holes

NYLON M/F HEX STANDOFF

文件：230.74 Kbytes Page：1 Pages

MALE/FEMALE THREADED STANDOFFS

文件：310.8 Kbytes Page：1 Pages

Ultra-Flexible White LED Strip - 480 per meter - 5m long - Warm White ~3000K

文件：148.94 Kbytes Page：2 Pages