N-channel enhancement mode field-effect transistor

Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH3230 in SOT669 (LFPAK). Features ■ Logic level compatible ■ Low drive current ■ High density mounting ■ Very low on-state resistance. Applicat

N-channel enhancement mode field-effect transistor

N-channel TrenchMOS intermediate level FET

1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

N-channel TrenchMOS intermediate level FET

N-channel TrenchMOS??logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level compatible ■ Low gate charge ■ High density mounting ■ Very low on-state resistance. Applications ■ DC-to-DC converters ■ Switched-mode power su

N-channel TrenchMOS intermediate level FET

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

Chopper-Stabilized Hall-Effect Bipolar Switch

Description The A3230 Hall-effect sensor is a temperature stable, stress resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro®bipolar switch family and is intended for ring-magnet sensing. Superior high-temperature performance is made possible through an

Size B Aluminum Box With Cover BNC Female/Female

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2/2 way Diaphragm Valve with plastic body, pneumatically operated, DN12 and 15

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112.5 MHz Lowpass Filter

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