1.1 General description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Saves PCB space due to small

footprint

Simple gate drive required due to low

gate charge

Suitable for logic level gate drive

sources

1.3 Applications

Computer motherboards

DC-to-DC convertors

Notebook computers

Switched-mode power supplies