N-channel TrenchMOS ultra low level FET

1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Interfaces directly with low voltage gate drivers\n• Low conduction losses due to low on-state resistance;

N-channel TrenchMOS??ultra low level FET

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N-channel TrenchMOS ultra low level FET

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION The µPC2918, 2925 and 2926 are three-terminal low dropout voltage regulators with the 1-A output. The µPC2918 outputs 1.8 V, the µPC2925 outputs 2.5 V and the µPC2926 outputs 2.6 V. Since these regulators use a PNP transistor for the

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION The µPC2918, 2925 and 2926 are three-terminal low dropout voltage regulators with the 1-A output. The µPC2918 outputs 1.8 V, the µPC2925 outputs 2.5 V and the µPC2926 outputs 2.6 V. Since these regulators use a PNP transistor for the

Low Dropout Regulator with Delayed Reset

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Low Dropout Regulator with Delayed Reset

文件：223.22 Kbytes Page：8 Pages