Radar Pulsed Power Transistor, 2OW, loops Pulse, 10 Duty 2.7 - 3.1 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigicated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic‘Metal/Ceramic P

Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100關s Pulse, 10 Duty

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Bipolar

Radar Pulsed Power Transistor

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20Watts, 36 Volts, 100us, 10 Radar 2700-3100 MHz

GENERAL DESCRIPTION The 2731-20is an internally matched, COMMON BASE bipolar transistor capable of providing 20Watts of pulsed RF output power at 100 pulse width, 10 duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm

Microwave power transistor