Radar Pulsed Power Transistor, 110W, 100us Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/cerami

Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

文件：108.8 Kbytes Page：3 Pages

Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

文件：133.23 Kbytes Page：3 Pages

Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

文件：133.23 Kbytes Page：3 Pages

Radar Pulsed Power Transistor

文件：653.33 Kbytes Page：4 Pages

S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. L