N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOSTM technology 1.2 Features and benefits  Low thermal resistance  Low threshold voltage  Optimized for use in DC-to-DC converters  Very low switching and cond

N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK

N-channel TrenchMOS-TM logic level FET

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MOS(场效应管)

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Description Representing the latest advancements in high-speed lithium niobate technology, the 40 Gbits/s electrooptic modulator is designed for long-wavelength, single-mode, external amplitude modulation applications. It uses an integrated Mach-Zehnder configuration to convert single polarizatio

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