包装：袋 描述：BOX MOUNTING SUPPORT BRACKET 盒子，外壳，机架 盒配件

包装：袋 描述：BOX MOUNTING SUPPORT BRACKET 盒子，外壳，机架 盒配件

CW Power Transistor, 1W 2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Hermetic Metal/Ceramic Package

CW Power Transistor 1W, 2.3 GHz

Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors • Gold metalization system • Hermetic metal/Ceramic package

CW Power Transistor,14W 2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Gold Metallization System • Hermetic Metauceramic Package • Diffused Emitter Ballasting Resistors • Internal Input and Output Impedance Matching

CW Power Transistor 14W, 2.3 GHz

Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Gold metallization system • Hermetic metauceramic package • Diffused emitter ballasting resistors • Internal input and output impedance matching

CW Power Transistor, 3.5W 2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Hermetic MetalCeramic Package

CW Power Transistor 3.5W, 2.3 GHz

Features • NPN Silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors • Gold metalization system • Hermetic metal/ceramic package

CW Power Transistor 5W, 2.3 GHz

Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors • Gold metalization system • Hermetic metal / ceramic package

CW Power Transistor, 5W ,2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Hermetic Metal/Ceramic Package

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching.

NPN switching transistor

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power Dissipation

Silicon NPN transistor in a TO-92(R) Plastic Package

Descriptions Silicon NPN transistor in a TO-92(R) Plastic Package. Features Low current, low voltage. Applications High-speed switching.

TO-92 Plastic-Encapsulate Transistors

FEATURES Power Dissipation

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low current, low voltage. Applications High-speed switching.

TO-92 Plastic-Encapsulate Transistors

FEATURES Power Dissipation

High Linearity InGaP HBT Amplifier

文件：403.77 Kbytes Page：5 Pages

CW Power Transistor 1W, 2.3 GHz

CW Power Transistor 14W, 2.3 GHz

CW Power Transistor 3.5W, 2.3 GHz

CW Power Transistor 3.5W, 2.3 GHz

文件：125.53 Kbytes Page：2 Pages