Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor - 12 Watts,1.20-1.40 GHz, 150 mS Pulse, 10 Duty

Description M/A-COM’s PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-12M can produce 12 watts

Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

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Bipolar

Radar Pulsed Power Transistor

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iglide® Q

Excellent wear resistance, especially for extreme loads Recommended for extreme pv values Good coefficient of friction Resistant to dirt

iglide® Q

Excellent wear resistance, especially for extreme loads Recommended for extreme pv values Good coefficient of friction Resistant to dirt