Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20 Duty

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L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC HERMETIC PACKA

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10 Duty For Ground Based Radar Applications

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L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10 Duty For Ground Based Radar Applications

文件：829.52 Kbytes Page：5 Pages