Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30 Duty

Description M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars. Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percen

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal input and output impedance matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

Radar Pulsed Power Transistor 100W, 1.1-1.3 GHz, 3關s Pulse, 30 Duty

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Radar Pulsed Power Transistor

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