Description

M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars. Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percent duty cycle. The transistor is housed in a 2-lead rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

Features

• NPN Silicon Microwave Power Transistor

• Common Base Configuration

• Broadband Class C Operation

• High Efficiency Interdigitated Geometry

• Diffused Emitter Ballasting Resistors

• Gold Metalization System

• Internal Input and Output Impedance Matching

• Hermetic Metal/Ceramic Package