1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：323.43 Kbytes Page：15 Pages

1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：323.43 Kbytes Page：15 Pages

1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：323.43 Kbytes Page：15 Pages

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz,