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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PF08103B | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Features • 1 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • Simple band switching and power control • High gain 3stage amplifier : +1 dBm input for GS | HitachiHitachi Semiconductor 日立日立公司 |   | |
PF08103B | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone | HitachiHitachi Semiconductor 日立日立公司 | | |
Breake Away Header .025(0.64mm) Square Posts [FOXCONN] Breake Away Header .025 (0.64mm) Square Posts | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RADIAL LEADED INDUCTORS 文件：502.78 Kbytes Page：21 Pages | TAIYO-YUDEN 太阳诱电 | | ||
RADIAL LEADED INDUCTORS 文件：522.82 Kbytes Page：20 Pages | TAIYO-YUDEN 太阳诱电 | | ||
RADIAL LEADED INDUCTORS 文件：677.5 Kbytes Page：20 Pages | TAIYO-YUDEN 太阳诱电 | | ||
RADIAL LEADED INDUCTORS 文件：522.82 Kbytes Page：20 Pages | TAIYO-YUDEN 太阳诱电 | |
PF08103B产品属性
- 类型
描述
- 型号
PF08103B
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
HIT/RENES |
25+23+ |
BGA |
7772 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
HITACHI |
24+ |
SMD |
90000 |
一级代理商进口原装现货、价格合理 |
|||
RENESAS |
22+ |
BGA |
1000 |
全新原装现货!自家库存! |
|||
HITACHI |
24+ |
QFN |
22055 |
郑重承诺只做原装进口现货 |
|||
24+ |
3000 |
公司存货 |
|||||
RENESAS |
04+ |
BGA |
5 |
原装现货海量库存欢迎咨询 |
|||
HITACHI |
24+ |
N/A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
HIT |
18+ |
SMD |
85600 |
保证进口原装可开17%增值税发票 |
PF08103B芯片相关品牌
PF08103B规格书下载地址
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DdatasheetPDF页码索引
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