MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Features • 1 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • Simple band switching and power control • High gain 3stage amplifier : +4.5 dBm input •

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module\nfor E-GSM900 and DCS1800 Dual Band Handy Phone •  1 in / 2 out dual band amplifier\n•  Simple external circuit including output matching circuit\n•  Simple band switching and power control\n•  High gain 3stage amplifier : +4.5 dBm input\n•  Lead less thin & Small package : 11 ×13.75 ×1.8 mm\n•  High efficiency : 48% Typ at 34.5 dBm for E-GSM;

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Features • 1 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • Simple band switching and power control • High gain 3stage amplifier : +1 dBm input for GS

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

RADIAL LEADED INDUCTORS

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NTC Power Thermistors Inrush Current Limiters

文件：144.85 Kbytes Page：5 Pages