NPN/NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

NPN resistor-equipped transistors; R1 = 47 kohm, R2 = 47 kohm

DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduce

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 PNP/PNP complement: PEMB2 2. Features and benefits • 100 mA output current capability • Built-in bias re

NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

General description NPN/NPN resistor-equipped transistors. Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transistors in

NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1 General description NPN/NPN resistor-equipped transistors. 1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transisto

PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

NPN/NPN resistor-equipped transistors;

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transist

NPN/NPN resistor-equipped transistors R1 = 47 k?? R2 = 47 k?

文件：621.28 Kbytes Page：14 Pages

NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

NPN/NPN resistor-equipped transistors R1 = 2.2 k廓, R2 = 2.2 k廓

文件：283.95 Kbytes Page：9 Pages

NPN/NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm

NPN/NPN resistor-equipped transistors R1 = 100 kW, R2 = 100 kW

文件：66.29 Kbytes Page：9 Pages