PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open

DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-7

PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PN

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP

50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

1. General description PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces c

PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages 1.2 Features 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN NXP JEITA complement PEMB30 SOT666 - PEMD30 PEMH30 PUMB30 SO

PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

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PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

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