位置：首页 > IC中文资料第5730页 > PEB2047N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim | PHILIPS 飞利浦 |   | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli | PHILIPS 飞利浦 | | ||
UHF power transistor DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m | PHILIPS 飞利浦 | | ||
UHF power LDMOS transistor 文件：103.84 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? 文件：36.03 Kbytes Page：2 Pages | POLYFET | |
PEB2047N产品属性
- 类型
描述
- 型号
PEB2047N
- 功能描述
Telecom Switching Circuit
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
2026+ |
SMD |
54648 |
百分百原装现货 实单必成 |
|||
00+ |
金属管 |
26 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
PHI |
19+ |
SMD |
20000 |
||||
PHI |
23+ |
MODULE |
18721 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
PH |
24+ |
580 |
|||||
PHI |
23+ |
TO-63 |
600 |
专营高频管模块,全新原装! |
|||
PHIL |
23+ |
442 |
|||||
PHI |
23+ |
98900 |
原厂原装正品现货!! |
||||
22+ |
金属管 |
20000 |
公司只有原装 品质保证 |
||||
PHI |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
PEB2047N规格书下载地址
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2019-8-22
DdatasheetPDF页码索引
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