2 dB Fixed Attenuator, 75 BNC Male To 75 BNC Female Brass Nickel Body Rated To 1 Watt Up To 1 GHz

文件：212.75 Kbytes Page：3 Pages

2 dB Fixed Attenuator, 75 Ohm BNC Male to 75 Ohm BNC Female Brass Nickel Body

文件：278.14 Kbytes Page：5 Pages

2 dB Fixed Attenuator, 75 Ohm BNC Male to 75 Ohm BNC Female Brass Nickel Body Rated to 1 Watt Up to 1,000 MHz

2 dB Fixed Attenuator, 75 Ohm BNC Male to 75 Ohm BNC Female Brass Nickel Body

文件：278.14 Kbytes Page：5 Pages

20 dB Fixed Attenuator, 75 Ohm BNC Male to 75 Ohm BNC Female Brass Nickel Body

文件：278.29 Kbytes Page：5 Pages

20 dB Fixed Attenuator, 75 BNC Male To 75 BNC Female Brass Nickel Body Rated To 1 Watt Up To 1 GHz

文件：212.9 Kbytes Page：3 Pages

20 dB Fixed Attenuator, 75 Ohm BNC Male to 75 Ohm BNC Female Brass Nickel Body

文件：278.29 Kbytes Page：5 Pages

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5