50 Ohm 10 Watts Black Anodized Aluminum Heatsink N Male RF Load Up To 6 GHz

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10 Watt RF Load Up to 6 GHz With N Male Input IP68 Rated Black Anodized Aluminum Heatsink

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10 Watt RF Load Up to 6 GHz With N Male Input IP68 Rated Black Anodized Aluminum Heatsink

文件：426.47 Kbytes Page：4 Pages

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant.

High-Speed USB and Audio DPDT Switch

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