50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • 500 mA output current capability • Reduces component c

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

M.2 Socket, H2.1 A Key 0.5 Pitch G/F, Black, Reel

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

General Purpose Tweezers

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3.6V/400mAh

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