NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

NPN resistor-equipped transistors;

PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

丝印代码：02；NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

丝印代码：E1；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. PNP complement: PDTA143EM 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit desig

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

丝印代码：00111010；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

丝印代码：101001；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  built-in bias resistors  simplifies circuit design  reduces component count  reduced pick and place costs  low package height of 0.37 mm  AEC-Q101 qualified  suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

丝印代码：E6；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

丝印代码：E6；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

丝印代码：8N；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

丝印代码：8N；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

丝印代码：-02；NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

丝印代码：-02；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

Digital Transistor

Features © Epitaxial planar die construction © Buin biasing resistors (Ri: 4.7K, Re: 4.740) © Also available in lead free version ® RoHS compliant with Halogen-free

丝印代码：02；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ET 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces co

PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

丝印代码：02；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ET 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces co

PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

丝印代码：02；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EU 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

丝印代码：02；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EU 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

NPN resistor-equipped transistors;

文件：755.56 Kbytes Page：17 Pages

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW SC89 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN resistor-equipped transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW SMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

丝印代码：101001；50 V, 100 mA NPN resistor-equipped transistors

文件：2.78525 Mbytes Page：21 Pages

丝印代码：-02；Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

CASE 463-01, STYLE 1 SOT-416/SC-90

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transi

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

High Voltage Operational Amplifier

文件：228.44 Kbytes Page：12 Pages

High Voltage Operational Amplifier

文件：228.44 Kbytes Page：12 Pages