NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

丝印代码：01001010；NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm

NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

封装/外壳：3-XFDFN 包装：卷带（TR） 描述：TRANS PREBIAS NPN 50V DFN1006B-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

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