型号 功能描述 生产厂家 企业 LOGO 操作
PDTA115ES

PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

Philips

飞利浦

PDTA115ES

PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

ETC

知名厂家

PDTA115ES

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

NEXPERIA

安世

PDTA115ES

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

NEXPERIA

安世

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR) 描述:TRANS PREBIAS PNP 500MW TO92-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

ETC

知名厂家

Customer Specifications

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Ca

ALPHAWIRE

Resistance, continuity, frequency, capacitance, and diode test

文件:1.30263 Mbytes Page:2 Pages

FLUKE

福禄克

Point-to-point Wiring

文件:300.88 Kbytes Page:1 Pages

ARIES

Commercial 3/4 (19.05mm) diameter, 2 watt variable resistor

文件:1.06892 Mbytes Page:4 Pages

CTS

西迪斯

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

PDTA115ES产品属性

  • 类型

    描述

  • 型号

    PDTA115ES

  • 功能描述

    开关晶体管 - 偏压电阻器 TRANS BISS AMMO LARGE

  • RoHS

  • 制造商

    ON Semiconductor

  • 晶体管极性

    NPN/PNP

  • 安装风格

    SMD/SMT

  • 封装/箱体

    直流集电极/Base Gain hfe

  • Min

    200 mA

  • 最大工作频率

    集电极—发射极最大电压

  • VCEO

    50 V

  • 集电极连续电流

    150 mA

  • 功率耗散

    200 mW

  • 封装

    Reel

更新时间:2025-12-17 17:14:00
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