PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114YMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device(SMD) plastic package. NPN complement: PDTC114YU-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduce

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 250MW SMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V DFN1006-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 RED 2 WHITE 4 GREEN/YELLOW 2) Cable Assembly 4 Components Cabled a) T

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 RED 2 WHITE 4 GREEN/YELLOW 2) Cable Assembly 4 Components Cabled a) T

STATIC SEALS

DESCRIPTION The BECA 114 is a BS ring composed of a metal ring with a rectangular crosssection, to the inside of which a rubber ring with a trapezoidal cross-section has been bonded and vulcanised. APPLICATIONS Sealing under the screw heads and bolts General mechanics Motors Pipe fit

Dual-In-Line Stratum 3 OCXO

文件：55.22 Kbytes Page：2 Pages

Easy Identification and Tracing with 10-color Cable

文件：782.9 Kbytes Page：2 Pages