PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

NPN resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

丝印代码：11；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open

PNP Resistor-Equipped Transistors (RET) family in small plastic packages. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified;

NPN resistor-equipped transistors; R1 = 10 kW, R2 = open

Low VCEsat (BISS) transistors

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PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V TO236AB 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its xternal resistor bias network. The BRT eliminate

CASE 463-01, STYLE 1 SOT-416/SC-90

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminat

CASE 463-01, STYLE 1 SOT-416/SC-90

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital trans

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff