20V P-Channel MOSFETs

Features - -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for -1.8V Gate Drive Applications - Notebook Applications - Load Switch - Networking

Middle & Low Voltage MOSFET

MOSFETs

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages