型号 功能描述 生产厂家&企业 LOGO 操作
PDM41028LA12SOTY

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

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etc未分类制造商未分类制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

PDM41028LA12SOTY产品属性

  • 类型

    描述

  • 型号

    PDM41028LA12SOTY

  • 功能描述

    1 Megabit Static RAM 256K x 4-Bit

更新时间:2025-8-10 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PDM41028SA12SO
66
66
24+
SOP
25
PARADIG
24+
CDIP36
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IXYS
22+
NA
500000
万三科技,秉承原装,购芯无忧
PARADIGM
9625+
SOJ
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
96
SOJ
6
原装现货海量库存欢迎咨询
PARADIGM
2023+
CDIP36
8800
正品渠道现货 终端可提供BOM表配单。
PARADIG
1902+
SOJ28
2734
代理品牌
PARADIGM
23+
CDIP36
16
全新原装正品现货,支持订货
23+
SOJ
96800
原厂授权一级代理,专业海外优势订货,价格优势、品种

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