位置：首页 > IC中文资料第9997页 > PDM41028
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PDM41028 | 1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1 Megabit Static RAM 256K x 4-Bit [Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both | ETCList of Unclassifed Manufacturers 未分类制造商 | |
PDM41028产品属性
- 类型
描述
- 型号
PDM41028
- 功能描述
1 Megabit Static RAM 256K x 4-Bit
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CMD |
SOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
25+ |
SOP |
2700 |
全新原装自家现货优势! |
||||
NIEC |
23+ |
110A250V |
120 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
PDM41028SA12SO |
25+ |
66 |
66 |
||||
NIEC/英达 |
25+ |
MODULE |
52 |
主打螺丝模块系列 |
|||
24+ |
SOP |
25 |
|||||
PARADIGM |
96 |
SOJ |
3 |
原装现货海量库存欢迎咨询 |
|||
原厂 |
2023+ |
SOP |
50000 |
原装现货 |
|||
NIEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
NI |
25+ |
MODULE |
495 |
就找我吧!--邀您体验愉快问购元件! |
PDM41028芯片相关品牌
PDM41028规格书下载地址
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PDM41028数据表相关新闻
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2023-8-1PDME2-S5-D12-S
PDME2-S5-D12-S
2023-2-13PDP-4R-50/68427，PDSO14LD，PDSO8LD，PE52，PE-68027，PE-68035，PE-95000，PE-95010，PEB2018N，PEB20256E-V2.1，PEB2025PV1.5，PEB2026T-P，Q863C，QC100，QCMS-2296，QCMS-2364，QCMS-2607，QCPL-260P
PDP-4R-50/68427，PDSO14LD，PDSO8LD，PE52，PE-68027，PE-68035，PE-95000，PE-95010，PEB2018N，PEB20256E-V2.1，PEB2025PV1.5，PEB2026T-P，Q863C，QC100，QCMS-2296，QCMS-2364，QCMS-2607，QCPL-260P
2019-12-25PDL06-24D05W，原装现货，DC-DC电源转换器模块
达恩科技代理分销 P-DUKE.MINMAX. MEANWELL.TRACO.COSEL.MORNSUN 一系列DC-DC/AC-DC 电源转换器， 产品广泛用于医疗设备.轨道交通.军事设备.工控设备等领域。 联系人：刘小姐：13510619928/微信同号，QQ:3171516190
2019-11-5PDL06-12D05，6W输入：9~18VDC，输出：±5VDC/±600mA，DC-DC电源转换器一系列优势供应
达恩科技代理分销 P-DUKE.MINMAX. MEANWELL.TRACO.COSEL.MORNSUN 一系列DC-DC/AC-DC 电源转换器， 产品广泛用于医疗设备.轨道交通.军事设备.工控设备等领域。 联系人：刘小姐：13510619928/微信同号，QQ:3171516190
2019-11-4PDL06-24S05WDC-DC电源转换器，原装现货优势供应！！
达恩科技代理分销 P-DUKE.MINMAX. MEANWELL.TRACO.COSEL.MORNSUN 一系列DC-DC/AC-DC 电源转换器， 产品广泛用于医疗设备.轨道交通.军事设备.工控设备等领域。 联系人：刘小姐：13510619928/微信同号，QQ:3171516190
2019-11-4
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