Excellent thermal stability

Description The PD85006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006-E boasts the excell

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF power transistor the LdmoST plastic family

Description The PD85006L-E is a common source N-channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006L-E boasts the exce

6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package

封装/外壳：8-PowerVDFN 包装：托盘 描述：TRANS RF POWER POWERFLAT5X5 分立半导体产品 晶体管 - FET，MOSFET - 射频

6W 13.6V 870MHz LDMOS in PowerFLAT plastic package

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条成形引线） 包装：托盘 描述：FET RF 40V 870MHZ POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频